Massive tunnel magnetoresistance in a all-Heusler junction: a flexible platform for new spintronics devices

Worasak Rotjanapittayakul, Jariyanee Prasongkit, Ivan Rungger, Stefano Sanvito, Wanchai Pijitrojana and
Thomas Archer

We present a protocol, combining electronic structure calculations, symmetry analysis and quan- tum transport, to design high-performance all-Heusler spin valves. By imposing the constraints of structural compatibility, stability and a large tunnelling magnetoresistance, we have identified the Fe 3 Al/BiF 3 /Fe 3 Al stack as a possible rival to the well-established FeCoB/MgO/FeCoB. Various geometries of the Fe 3 Al/BiF 3 /Fe 3 Al structure have been analyzed, demonstrating that a barrier of less than 2 nm yields a tunnelling magnetoresistance in excess of 25,000 % at low bias, without the need for the electrodes to be half-metallic. Our design strategy thus demonstrates the possibility of engineering novel heterostructures with enhanced spin transport properties.

Proposing a new junction from theory is a long way from demonstrating it in reality, there are many processes at the interface that we will not know until someone attempts to make it. Here we present a study of the secondary phases and their relative stability for the Fe-Al-F-Bi system.

We caculate the Cu2MnAl Hg2CuTi and MgAgAs prototype phases for the sites occupide by Fe,Al,F or Bi.

This database is a small part of our materials database. Here we present our data on Heusler phases in the Fe-Al-F-Bi system, presented in our recent paper.

Abstract

Here we provide the data from our high-throughput investigation

Calculated phases.

A dump of the mysql MRG database is provided here.

--- Created by Thomas Archer, Trinity College, Dublin ---